Abstract: The Silicon Carbide (SiC) MOSFET is widely recognized for its exceptional performance attributes. However, two primary issues restrict the operational capabilities of SiC MOSFET power ...
Abstract: Accurate thermal evaluations based on the classical subcircuit method for advanced transistors (e.g., FinFETs and GAAFETs) have become more complex and time-consuming. This study proposes a ...
Guangdong Provincial Key Laboratory of Stomatology, Department of Oral and Maxillofacial Surgery, Guanghua School of Stomatology, Sun Yat-sen University, Guangzhou, Guangdong, China Objective: By ...