Dynamic Random Access Memory (DRAM) serves as the backbone of modern computing, enabling devices ranging from smartphones to high-performance servers. As the demand accelerates for higher density and ...
(Nanowerk Spotlight) For new generation electronic appliances advanced nanoscale transistors are in demand which needs precise biasing of each device. These stringent biasing conditions can be relaxed ...
(Nanowerk News) At this week’s IEEE IEDM conference, world-leading research and innovation hub for nano-electronics and digital technology, imec, reported for the first time the CMOS integration of ...
As noted in EE Times almost one month prior to the December 2007 International Electron Devices Meeting (IEDM), the main features of Intel's 45-nanometer process technology are the incorporation of ...
Imec has demonstrated for the first time fully functional integrated forksheet FETs, with short-channel control (SSSAT=66-68mV/dec) comparable to GAA nanosheet devices down to 22nm gate length. Dual ...
Dynamic random-access memory (DRAM) chips contain many other transistors besides the access transistor to enable full operation of the DRAM memory. These peripheral transistors must meet stringent ...
Nanoelectronics research center imec has reported for the first time the CMOS integration of vertically stacked gate-all-around (GAA) silicon nanowire MOSFETs. Key in the integration scheme is a ...
In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize ...
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