Delta's Three-Phase PV Inverter benefits from the efficiency offered by SiC technology The NXH40B120MNQ family of full SiC power modules integrate a 1200 V, 40mΩ SiC MOSFET and 1200 V, 40 A SiC boost ...
TOKYO--(BUSINESS WIRE)-- Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor ...
NUREMBERG, Germany--(BUSINESS WIRE)--PCIM 2023 – Power Integrations (NASDAQ: POWI), the leader in gate-driver technology for medium- and high-voltage inverter applications, today introduced the ...
CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. recently launched a new Silicon Carbide (SiC) power module FMF400DY-24B. The 400A, 1200V Dual SiC MOSFET module includes an anti-parallel ...
The high 300A rated current makes the BSM300D12P2E001 suitable for high power applications such as large-capacity power supplies for industrial equipment, while 77% lower switching loss vs.
Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...
The AgileSwitch digital programmable gate driver and SP6LI SiC power module kit solution enables developers to proceed quickly from benchtop to production. Related To: Microchip Technology Microchip ...
Santa Clara, CA and Kyoto, Japan, Sept. 16, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the DOT-247, a new 2-in-1 SiC molded module (SCZ40xxDTx, SCZ40xxKTx) designed ...
Adoption of silicon carbide (SiC) is becoming more widespread among electric-vehicle (EV) systems such as dc-dc converters, traction inverters, and on-board chargers (OBCs) with bidirectional ...
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