EDN

Insulated Gate Bipolar Transistor Basics

This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...
Semiconductor Engineering

Improving Gate All Around Transistor Performance Using Virtual Process Window Exploration

As transistor sizes shrink, short channel effects make it more difficult for transistor gates to turn a transistor ON and OFF [1]. One method to overcome this problem is to move away from planar ...
Purdue University

Researchers build transistor-like gate for quantum information processing – with qudits

WEST LAFAYETTE, Ind. — Quantum information processing promises to be much faster and more secure than what today’s supercomputers can achieve, but doesn’t exist yet because its building blocks, qubits ...
Semiconductor Engineering

The Impact Of Metal Gate Recess Profile On Transistor Resistance And Capacitance

In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize ...
Electronics Weekly

Bipolar npn and pnp transistors up to 100V or 10A in 3x3mm

Diodes has introduced a series of low saturation npn and pnp bipolar transistors optimised for automotive power switching and control. “With BVceo up to 100V, continuous current to 10A – and 20A peak ...