Cree, Inc. announces the sample release of a 90W, highly efficient GaN HEMT microwave transistor for general-purpose military and industrial applications such as electronic warfare, radar, tactical ...

DURHAM, N.C., JANUARY 28, 2009 — Cree, Inc (Nasdaq: CREE) announces the sample release of two 120W, highly efficient GaN HEMT microwave transistors for telecommunication applications such as W-CDMA, ...

Integra Technologies, the El Segundo RF and microwave transistor and amplifier specialist, is offering an IFF avionics transistor offering 120W peak output power using GaN technology. Designed for IFF ...

Integra Technologies, the RF and microwave transistor and amplifier specialist, has announced a pair of 135 W and a 130 W GaN-on-SiC transistors for S-band radar applications. IGT2731M130 is a 50-Ohm ...

M/A-COM, a unit of Tyco Electronics has two new LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistors designed for INMARSAT applications. INMARSAT is the satellite service that serves a ...

It may seem like a holdout against the solid-state world, but the vacuum-tube magnetron is still at the heart of every consumer microwave oven and many commercial ones used for cooking or drying.

Transport phenomena in semiconductors, theory of the p-n junction, bipolar and unipolar devices, general analysis of the metal-semiconductor and MIS structures, CCD, MOSFET and bipolar transistors.

This article was produced for RFHIC by Scientific American Custom Media, a division separate from the magazine's board of editors. RFHIC's co-founder and CEO, David Cho (left), and RFHIC's co-founder ...

(Nanowerk News) A household microwave oven modified by a Cornell Engineering professor is helping to cook up the next generation of cellphones, computers and other electronics after the invention was ...