DURHAM, N.C.--(BUSINESS WIRE)--In a move that heralds a performance revolution in energy efficient power electronics, Cree, Inc. (Nasdaq: CREE), a market leader in silicon carbide (SiC) power devices, ...
ALBANY, N.Y., Sept. 8, 2025 /PRNewswire/ --NoMIS Power Corporation, a leader in advanced Silicon Carbide (SiC) power semiconductor technology, today announced the commercial release of its first 3.3 ...
A University at Buffalo team has proposed a new form of power MOSFET transistor that can handle incredibly high voltages with minimal thickness, heralding an efficiency increase in the power ...
Weakness in demand for consumer electronics devices has pushed up small-signal and general-purpose MOSFET inventories, according to industry sources. Save my User ID and Password Some subscribers ...
After discussing the three transistor high-side buck p-mosfet driver (a recognised circuit and not mine) with some of EW’s sage commenters, I wondered once again if I could design something similar ...
Vishay Intertechnology, Inc. has released its new 30 V n-channel TrenchFET ® Gen IV power MOSFET that delivers increased power density and efficiency for mobile devices, consumer electronics and power ...
In power electronics, MOSFET on-resistance RDS(on) typically increases as temperature rises, leading to higher heat generation, reduced efficiency, and potential thermal runaway. Para Light ...
Designers that rely on Single-pulse Avalanche energy, EAS, alone for an application can be in for a surprise. This article will demystify this relatively unknown parameter that sheds light on the ...
After discussing the three transistor high-side buck p-mosfet driver (a recognised circuit and not mine) with some of EW’s sage commenters, I wondered once again if I could design something similar ...
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