Santa Clara, CA and Kyoto, Japan, April 24, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of new 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package optimized for ...
A stacked DBC packaging method utilizes mutual inductance cancellation effects to significantly reduce parasitic inductance. With the current path increased by one-fold, SiC power modules allow for ...
In the first part of this blog, we had a look at how energy-efficient high-power modules contribute to the decarbonization of railway transportation. This part will focus on the future of traction: ...
Manufacturers of silicon carbide (SiC) and gallium nitride (GaN) power ICs leveraged the APEC 2024 conference to highlight their latest developments in wide-bandgap semiconductors. These devices offer ...
SemiQ provides high-quality, efficient standard, and custom silicon carbide (SiC) power semiconductors for high-voltage applications. Our product portfolio – including MOSFETs and diodes, in discrete, ...
CHANDLER, Ariz., Sept. 16, 2025 (GLOBE NEWSWIRE) -- The growing need for compact, efficient and reliable power solutions is driving demand for power management devices that provide higher power ...
Navitas Semiconductor has entered into higher power markets with the introduction of silicon carbide (SiC) power products in SiCPAK SiC modules and bare die. Target applications include solar ...
Relationship of power density and field strength. Some of the more uncommon power-density apps. RF designers frequently need to know the true power density or field intensity at a particular distance ...
KYOTO, Japan, April 24, 2025 /PRNewswire/ -- ROHM Co., Ltd. has developed new 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package for power-factor-correction (PFC) circuits and LLC-resonant ...
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