SAN FRANCISCO — At the International Solid-State Circuits Conference (ISSCC) here, Toshiba Corp. will describe a high-density, 128-megabit ferroelectric random access memory (FeRAM or FRAM). Based on ...
CEA-Leti research engineers have demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into the back-end-of-line (BEOL) at the 22 nm FD-SOI ...
Over the past five years, NAND flash has gone from an exceedingly expensive storage solution that only a handful of customers could afford to a mainstream product used by millions of high-speed ...
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