Fremont, CA – October 23, 2013 – Soraa, the world leader in the development of GaN on GaN LED technology, announced today that it has been awarded several million dollars in funding by U.S. Department ...

LONDON — The photovoltaics sector is emerging as the fastest growing and best prospect for suppliers of GaAs bulk substrates, according to Strategy Analytics. According to the market research group, ...

Following the first reported 100 mm diameter AlN in 2023, the company now announces improved wafer quality based on specification for UVC LEDs Comparison of Crystal IS 100 mm bulk aluminum nitride ...

A new technical paper titled “3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD” was published by researchers at Arizona State University. “This letter reports the first demonstration ...

Researchers at US-based Technology and Devices International (TDI) have created a gallium nitride (GaN) bulk substrate, which they say will improve the performance and lifetimes of GaN-based device ...

ScAlMgO 4 (SCAM) crystalline substrates are attracting interest as a possible alternative to sapphire and silicon carbide. The article discusses the utilization of SCAM substrates for nitride ...

NEW YORK & TOKYO & DÜSSELDORF--(BUSINESS WIRE)--Crystal IS, an Asahi Kasei company, today announced the successful serial production of 100 mm diameter single-crystal aluminum nitride (AlN) substrates ...